Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

Abstract

The crystallinity of atomic layer deposition hafnium oxide was found to be thickness dependent, with the thinnest films being amorphous and thick films being at least partially crystalline. Hafnium oxide films fabricated by metalorganic chemical vapor deposition are mostly monoclinic. Formation of hafnium silicate by admixture of 20% Si prevents crystallization. Electronic defects are reflected by an absorption feature 0.2-0.3 eV below the optical bandgap. These defects arise in polycrystalline, but not in amorphous, hafnium-based oxides. © 2005 American Institute of Physics.