Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed. © Copyright 2006 by International Business Machines Corporation.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Xinyi Su, Guangyu He, et al.
Dianli Xitong Zidonghua/Automation of Electric Power Systems
Gal Badishi, Idit Keidar, et al.
IEEE TDSC
Thomas R. Puzak, A. Hartstein, et al.
CF 2007