Steven J. Koester, Martin M. Frank, et al.
ISTDM 2006
Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment. © 2006 American Institute of Physics.
Steven J. Koester, Martin M. Frank, et al.
ISTDM 2006
Wu Lu, Steven J. Koester, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Anuj Madan, John D. Cressler, et al.
Solid-State Electronics
Martin M. Frank, Chiara Marchiori, et al.
Microelectronic Engineering