Maciel Zortea, Miguel Paredes, et al.
IGARSS 2021
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented. © Copyright 2006 by International Business Machines Corporation.
Maciel Zortea, Miguel Paredes, et al.
IGARSS 2021
David S. Kung
DAC 1998
Pradip Bose
VTS 1998
Raghu Krishnapuram, Krishna Kummamuru
IFSA 2003