Khaled A.S. Abdel-Ghaffar
IEEE Trans. Inf. Theory
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented. © Copyright 2006 by International Business Machines Corporation.
Khaled A.S. Abdel-Ghaffar
IEEE Trans. Inf. Theory
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CAD Computer Aided Design
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ACL 2008
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