IBM J. Res. Dev

Germanium channel MOSFETs: Opportunities and challenges

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This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented. © Copyright 2006 by International Business Machines Corporation.