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IEEE/ACM Transactions on Networking
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented. © Copyright 2006 by International Business Machines Corporation.
Israel Cidon, Leonidas Georgiadis, et al.
IEEE/ACM Transactions on Networking
Chidanand Apté, Fred Damerau, et al.
ACM Transactions on Information Systems (TOIS)
Rafae Bhatti, Elisa Bertino, et al.
Communications of the ACM
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007