Qing Li, Zhigang Deng, et al.
IEEE T-MI
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented. © Copyright 2006 by International Business Machines Corporation.
Qing Li, Zhigang Deng, et al.
IEEE T-MI
Ohad Shamir, Sivan Sabato, et al.
Theoretical Computer Science
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997