Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
Conference paper
Publications
205 results for Vijay Narayanan
Extendable and Manufacturable Volume-less Multi-Vt Solution for 7nm Technology Node and beyond
- Ruqiang Bao
- Huimei Zhou
- et al.
- 2018
- IEDM 2018
Conference paperAC device variability in high-κ Metal-Gate CMOS Technology
- Keith A. Jenkins
- Karthik Balakrishnan
- et al.
- 2019
- IEEE Electron Device Letters
PaperDifferentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- Ruqiang Bao
- Richard G. Southwick
- et al.
- 2018
- VLSI Technology 2018
Conference paperAdvanced replacement high-K/metal gate stack engineering for high-performance strained silicon-germanium FinFETs with high Ge content
- Pouya Hashemi
- Takashi Ando
- et al.
- 2018
- AiMES - ECS - SMEQ 2018
Conference paperSignal and noise extraction from analog memory elements for neuromorphic computing
- Nanbo Gong
- T. Idé
- et al.
- 2018
- Nature Communications
PaperPBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation
- Eduard Cartier
- Martin M. Frank
- et al.
- 2018
- IRPS 2018
Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Conference paperHigh performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- IEDM 2017
Conference paperElectron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017
Conference paper