Publications

This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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76 results for Vijay Narayanan

Gradient descent-based programming of analog in-memory computing cores
- - Julian Büchel
  - A. Vasilopoulos
  - et al.
- 2022
- IEDM 2022
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- - Nanbo Gong
  - Malte Rasch
  - et al.
- 2022
- IEDM 2022
Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- - Ruqiang Bao
  - Curtis Durfee
  - et al.
- 2021
- IEDM 2021
HERMES Core - A 14nm CMOS and PCM-based In-Memory Compute Core using an array of 300ps/LSB Linearized CCO-based ADCs and local digital processing
- - Riduan Khaddam Aljameh
  - Milos Stanisavljevic
  - et al.
- 2021
- VLSI Technology 2021
HERMES Core - A 14nm CMOS and PCM-based In-Memory Compute Core using an array of 300ps/LSB Linearized CCO-based ADCs and local digital processing
- - Riduan Khaddam-Aljameh
  - Milos Stanisavljevic
  - et al.
- 2021
- VLSI Circuits 2021
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- - Ruqiang Bao
  - K. Watanabe
  - et al.
- 2020
- VLSI Technology 2020
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- - Ernest Wu
  - Takashi Ando
  - et al.
- 2019
- IEDM 2019
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- - John Rozen
  - K. Suu
  - et al.
- 2019
- IEDM 2019
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
- - S. Kim
  - John A. Ott
  - et al.
- 2019
- IEDM 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2018
- IEDM 2018