Calculating the error in long term oxide reliability estimatesB.P. LinderJ.H. Stathiset al.2001IRPS 2001
Calculating the error in long term oxide reliability estimatesB.P. LinderJ.H. Stathiset al.2001IRPS 2001
Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuitsJ.H. Stathis2001IRPS 2001
Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuitsJ.H. Stathis2001IRPS 2001
Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer densityS. LombardoF. Crupiet al.2001Annual Proceedings - Reliability Physics (Symposium)
Photoluminescence characterization of defects in thermal oxideHiroyuki NishikawaJames H. Stathis1999MRS Proceedings 1999
Breakdown measurements of ultra-thin SiO2 at low voltageJ.H. StathisA. Vayshenkeret al.2000VLSI Technology 2000
Ultra-thin oxide reliability for ULSI applicationsErnest Y. WuJames H. Stathiset al.2000Semiconductor Science and Technology
Gate oxide breakdown under Current Limited Constant Voltage StressB.P. LinderJ.H. Stathiset al.2000Digest of Technical Papers-Symposium on VLSI Technology
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETsPeter E. BlöchlJames H. Stathis1999Physica B: Condensed Matter