About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IRPS 2001
Conference paper
Calculating the error in long term oxide reliability estimates
Abstract
Ultra-thin oxide reliability is a critical issue in integrated circuit scaling. Oxide reliability may actually prevent future scaling of SiO2 gate dielectrics. The statistical error in long term oxide reliability projections has not been cohesively treated. Using Monte Carlo techniques, the amount of uncertainty in reliability projections is calculated. Applying the derived results to typical published data, the uncertainty in the failure rate is greater than an order of magnitude.