Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
Paper
Publications
169 results for James Stathis
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications
- Ernest Wu
- Baozhen Li
- et al.
- 2019
- IRPS 2019
Conference paperLong Term NBTI Relaxation under AC and DC Biased Stress and Recovery
- Elnatan Mataev
- James Stathis
- et al.
- 2019
- IRPS 2019
Conference paperBias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- Miaomiao Wang
- Jingyun Zhang
- et al.
- 2019
- IRPS 2019
Conference paperOn the Frequency Dependence of Bulk Trap Generation during AC Stress in Si and SiGe RMG P-FinFETs
- Narendra Parihar
- Uma Sharma
- et al.
- 2019
- IRPS 2019
Conference paperLateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics
- Miaomiao Wang
- Richard G. Southwick
- et al.
- 2018
- IRPS 2018
Conference paperElapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2018
- IRPS 2018
Conference paperThe physics of NBTI: What do we really know?
- James H. Stathis
- 2018
- IRPS 2018
Conference paperModeling of NBTI kinetics in RMG Si and SiGe FinFETs, Part-I: DC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
PaperModeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Paper