A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
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169 results for Jim Stathis
Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IEDM 2017
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
Comprehensive model for progressive breakdown in nFETs and pFETs
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2016
- IEDM 2016
Multiple breakdown phenomena and modeling for non-uniform dielectric systems
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2014
- IEDM 2014
Reliability challenges for the 10nm node and beyond
- 2014
- IEDM 2014
A time-dependent clustering model for non-uniform dielectric breakdown
- Ernest Y. Wu
- B. Li
- et al.
- 2013
- IEDM 2013
Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011