Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Defects in silica related to hydrogen and oxygen vacancies have been analyzed using first principles density functional calculations. The hydrogen bridge has been identified as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown. The question of Joule heating of the oxide as a result of dielectric breakdown is discussed. A classification scheme for defects in the short-range structure of silica is presented.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Mark W. Dowley
Solid State Communications
Sung Ho Kim, Oun-Ho Park, et al.
Small