Silicon near-surface disorder and etch residues caused by CCIF ₃/H₂ reactive ion etching

Abstract

The effects of SiO2 reactive ion etching (RIE) in CClF 3/H2 on the surface properties of the underlying Si substrate have been studied by photoemission and He ion scattering/channeling techniques. We find that RIE introduces a F, C, and Cl containing layer on the Si surface. Furthermore, displacement damage is introduced in the Si near-surface region during RIE processing. The efficacy of O2 plasma or rapid thermal annealing RIE post-treatments for removal of contamination and/or displacement damage has been investigated.