Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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16 results for C.M. Ransom

1.5-V single work-function W/WN/n⁺-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM
- - Rajesh Rengarajan
  - Boyong He
  - et al.
- 2002
- IEEE Electron Device Letters
Gate-Self-Aligned P-Channel Germanium Misfet's
- - Thomas N. Jackson
  - C.M. Ransom
  - et al.
- 1991
- IEEE Electron Device Letters
Recombination Lifetime Profiling in Very Thin Si Epitaxial Layers Used for Bipolar VLSI
- - Paolo Spirito
  - S. Bellone
  - et al.
- 1989
- IEEE Electron Device Letters
ELECTRICAL CHARACTERIZATION OF SILICON SURFACES EXPOSED TO RIE.
- - C.M. Ransom
  - P. Spirito
- 1986
- Symposium on Plasma Processing 1986
SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.
- - C.M. Ransom
  - T.O. Sedgwick
  - et al.
- 1983
- ECS Meeting 1983
PtSi-Induced Junction Leakage
- - J.P. Gambino
  - M.D. Monkowski
  - et al.
- 2019
- JES
Shallow n⁺ Junctions in Silicon by Arsenic Gas-Phase Doping
- - J.F. DeGeolormo
  - D.K. Sodana
  - et al.
- 1994
- JES
Recombination Measurement of n-Type Heavily Doped Layer in High/Low Silicon Junctions
- - Salvatore Bellone
  - Giovanni Busatto
  - et al.
- 1991
- IEEE T-ED
IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S
- - C.M. Ransom
  - T.N. Jackson
  - et al.
- 1991
- IEEE T-ED
Rie-induced damage and contamination in silicon
- - Young H. Lee
  - G.S. Oehrlein
  - et al.
- 1989
- Radiation Effects and Defects in Solids