Models for the Hydrogen‐Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

Abstract

Based on the quantitative consideration of the chemical effect of nearest neighbor atoms on the bond character and IR vibration frequency of SiH bond in silane molecules, models are proposed for SiH vibration centers and related defect–impurity complexes in crystalline silicon to account for the multiplicity of experimentally observed SiH IR bands in c‐Si and their annealing behavior. Problems related to the models are discussed, and experiments to test the models are described. Copyright © 1982 WILEY‐VCH Verlag GmbH & Co. KGaA