Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics

Abstract

Inversion charge pumping was introduced as an alternative method to measure the 'true' inversion charge in field effect transistors (FET). This method was used to extract the mobility in FETs with conventional and SiO 2/HfO2 dual layer gate dielectrics. Results indicated that the inversion charge in metal oxide semiconductor field effect transistors could be directly measured by a variant of the charge pumping technique in long channel devices.