Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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8 results for R. Degraeve

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- IEEE Electron Device Letters
Low Weibull slope of breakdown distributions in high-k layers
- - Thomas Kauerauf
  - Robin Degraeve
  - et al.
- 2002
- IEEE Electron Device Letters
Charge trapping in SiO₂/HfO₂ gate dielectrics: Comparison between charge-pumping and pulsed I_D-V_G
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- INFOS 2003
Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- VLSI Technology 2003
Characterization of the V_T-instability in SiO₂ / HfO₂ gate dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- IRPS 2003
Characterization of the V_T-instability in SIO₂/HFO₂ gate dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- IRPS 2003
Charge trapping and dielectric reliability of SiO₂-Al₂O₃ gate stacks with TiN electrodes
- - Andreas Kerber
  - Eduard Cartier
  - et al.
- 2003
- IEEE Transactions on Electron Devices
Ultrathin (<4 nm) SiO₂ and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
- - M.L. Green
  - E. Gusev
  - et al.
- 2001
- Journal of Applied Physics