Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters
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8 results for R. Degraeve
Low Weibull slope of breakdown distributions in high-k layers
- Thomas Kauerauf
- Robin Degraeve
- et al.
- 2002
- IEEE Electron Device Letters
Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VG
- A. Kerber
- E. Cartier
- et al.
- 2003
- INFOS 2003
Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- VLSI Technology 2003
Characterization of the VT-instability in SiO2 / HfO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Characterization of the VT-instability in SIO2/HFO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes
- Andreas Kerber
- Eduard Cartier
- et al.
- 2003
- IEEE Transactions on Electron Devices
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
- M.L. Green
- E. Gusev
- et al.
- 2001
- Journal of Applied Physics