Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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9 results for L. Pantisano

Impact of band structure on charge trapping in thin SiO ₂/Al ₂O ₃/poly-Si gate stacks
- - L. Pantisano
  - L. Lucci
  - et al.
- 2004
- IEEE Electron Device Letters
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
- - J. Westlinder
  - T. Schram
  - et al.
- 2003
- IEEE Electron Device Letters
Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- IEEE Electron Device Letters
Charge trapping in SiO₂/HfO₂ gate dielectrics: Comparison between charge-pumping and pulsed I_D-V_G
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- INFOS 2003
Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- VLSI Technology 2003
Characterization of the V_T-instability in SiO₂ / HfO₂ gate dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- IRPS 2003
Characterization of the V_T-instability in SIO₂/HFO₂ gate dielectrics
- - A. Kerber
  - E. Cartier
  - et al.
- 2003
- IRPS 2003
Characterization of field-effect transistors with La ₂Hf ₂O ₇ and HfO ₂ gate dielectric layers deposited by molecular-beam epitaxy
- - Z.M. Rittersma
  - J.C. Hooker
  - et al.
- 2006
- Journal of Applied Physics
Charge trapping and dielectric reliability of SiO₂-Al₂O₃ gate stacks with TiN electrodes
- - Andreas Kerber
  - Eduard Cartier
  - et al.
- 2003
- IEEE Transactions on Electron Devices