Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
7 results for L.Å. Ragnarsson
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- VLSI Technology 2003
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- Journal of Applied Physics
High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters
Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- Applied Physics Letters
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting