L.Å. Ragnarsson, S. Guha, et al.
IEEE Electron Device Letters
The Hall effect is used to measure the electron mobility in HfO 2 based n-channel field effect transistors with poly-Si gates. Large deviations between measured Hall and drift mobilities are explained by the presence of high concentrations of nonfixed charge (up to 4 × 10 12 cm-3). Simulated mobility curves show that the observed concentrations of fixed and nonfixed charge can estimate the measured mobility significantly better than if only the fixed charge concentration is used.
L.Å. Ragnarsson, S. Guha, et al.
IEEE Electron Device Letters
E. Gusev, V. Narayanan, et al.
IEDM 2004
S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997
D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics