Conference paper
Charge trapping in aggressively scaled metal gate/high-κ stacks
E. Gusev, V. Narayanan, et al.
IEDM 2004
The Hall effect is used to measure the electron mobility in HfO 2 based n-channel field effect transistors with poly-Si gates. Large deviations between measured Hall and drift mobilities are explained by the presence of high concentrations of nonfixed charge (up to 4 × 10 12 cm-3). Simulated mobility curves show that the observed concentrations of fixed and nonfixed charge can estimate the measured mobility significantly better than if only the fixed charge concentration is used.
E. Gusev, V. Narayanan, et al.
IEDM 2004
K.-L. Lee, M.M. Frank, et al.
VLSI Technology 2006
S. Guha, E. Cartier, et al.
Journal of Applied Physics
L. Clevenger, N.A. Bojarczuk, et al.
Journal of Applied Physics