Publications

57 results for Nicolas Loubet

Dielectric isolated FinFETs on bulk substrate
- - Darsen Lu
  - Kangguo Cheng
  - et al.
- 2014
- S3S 2014
Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization
- - F. Allibert
  - Pierre Morin
  - et al.
- 2014
- S3S 2014
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- - Q. Liu
  - M. Vinet
  - et al.
- 2013
- IEDM 2013
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2013
- IEEE Electron Device Letters
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- - A. Khakifirooz
  - R. Sreenivasan
  - et al.
- 2013
- S3S 2013
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2012
- IEDM 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- - A. Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- VLSI Technology 2012
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- IEEE Electron Device Letters
Effect of thermal annealing on carbon in in-situ phosphorous-doped Si _1-xC _x films
- - Thomas Adam
  - Nicolas Loubet
  - et al.
- 2012
- Thin Solid Films
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm² SRAM cell
- - Kangguo Cheng
  - A. Khakifirooz
  - et al.
- 2011
- VLSI Circuits 2011