Substrate engineering for germanium-based CMOS technology
- S.W. Bedell
- K.E. Fogel
- et al.
- 2006
- ECS Meeting 2006
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149 results for John A. Ott
High mobility strained Ge / SiGe PMOSFETs for high performance CMOS
- Huiling Shang
- J.O. Chu
- et al.
- 2006
- ECS Meeting 2006
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
- Qiqing Ouyang
- Min Yang
- et al.
- 2005
- VLSI Technology 2005
Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
Development of stacking faults in strained silicon layers
- S.W. Bedell
- A. Reznicek
- et al.
- 2005
- IEEE International SOI Conference 2005
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Characteristics of high performance PFETs with embedded SiGe source/drain and 〈100〉 channels on 45° rotated wafers
- Qiqing Ouyang
- Meikei Ieong
- et al.
- 2005
- VLSI Technology 2005
300 mm SGOI/strain-Si for high-performance CMOS
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- IEEE International SOI Conference 2004
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004