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Publication
ECS Meeting 2006
Conference paper
High mobility strained Ge / SiGe PMOSFETs for high performance CMOS
Abstract
Dramatic hole mobility enhancement of 4-25X has been demonstrated in compressively strained Ge p-channel MOSFETs - the highest mobility enhancement for hole carriers among all available options. This paper reviews the material properties of strained Ge/SiGe and the integration challenges of strained Ge MOSFETs. A compatible process to incorporate high performance strained Ge PMOSFETs into standard CMOS technology is presented. copyright The Electrochemical Society.