Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015
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149 results for John A. Ott
Strained-SiGe channel FinFETs for high-performance CMOS: Opportunities and challenges
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2015
- ECS Meeting 2015 Chicago
Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
- Can Bayram
- Jeehwan Kim
- et al.
- 2015
- SPIE OPTO 2015
Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
- Can Bayram
- John A. Ott
- et al.
- 2015
- SPIE OPTO 2015
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs
- Karthik Balakrishnan
- Pouya Hashemi
- et al.
- 2014
- DRC 2014
Advanced flexible electronics: Challenges and opportunities
- Stephen W. Bedell
- Davood Shahrjerdi
- et al.
- 2014
- SPIE Defense + Security 2014
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Technology 2013