Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
Chenyu Wen, Shuangshuang Zeng, et al.
ACS Sensors
Gregory Fritz, Adam Pyzyna, et al.
ADMETA 2012
J.-P. Han, S.M. Koo, et al.
Microelectronics Reliability