E. Gusev, C. Cabral Jr., et al.
Microelectronic Engineering
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
E. Gusev, C. Cabral Jr., et al.
Microelectronic Engineering
Xi Chen, Si Chen, et al.
IEEE T-ED
P. Solomon, M. Shamsa, et al.
IEDM 2007
H.D. Xiong, D.M. Fleetwood, et al.
Applied Physics Letters