Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
- M. Guillorn
- J. Chang
- et al.
- 2009
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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149 results for John A. Ott
Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
- K.L. Saenger
- K.E. Fogel
- et al.
- 2008
- Applied Physics Letters
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
- M.J. Rooks
- G.M. Cohen
- et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- Journal of Applied Physics
Doping of germanium nanowires grown in presence of PH3
- E. Tutuc
- J.O. Chu
- et al.
- 2006
- Applied Physics Letters
Hafnium oxide gate dielectrics on sulfur-passivated germanium
- Martin M. Frank
- Steven J. Koester
- et al.
- 2006
- Applied Physics Letters