Conference paper
High-performance SiGe MODFET technology
S.J. Koester, J.O. Chu, et al.
MRS Proceedings 2004
DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).
S.J. Koester, J.O. Chu, et al.
MRS Proceedings 2004
Yanning Sun, E.W. Kiewra, et al.
IEEE Electron Device Letters
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
K. Rim, S.J. Koester, et al.
VLSI Technology 2001