J.-P. Han, E.M. Vogel, et al.
IEEE Electron Device Letters
Mobility enhancement in strained Si NMOSFETs was demonstrated with HfO2 gate dielectrics. The split current-voltage technique was used to measure the gate to inversion channel capacitance. Integration of strained Si and high-K dielectrics provided an improved trade-off between device performance and gate leakage. Strained Si NMOSFETs exhibited 60% higher mobility than unstrained Si device with HfO2 gate dielectrics.
J.-P. Han, E.M. Vogel, et al.
IEEE Electron Device Letters
X.J. Zhou, D.M. Fleetwood, et al.
IEEE TNS
M. Copel, M. Gribelyuk, et al.
Applied Physics Letters
H. Okorn-Schmidt, C. D'Emic, et al.
Diffusion and Defect Data Pt.B: Solid State Phenomena