A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
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43 results for Tenko Yamashita
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016
Air spacer for 10nm FinFET CMOS and beyond
- K. Cheng
- C. Park
- et al.
- 2016
- IEDM 2016
Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
- et al.
- 2016
- IEEE Electron Device Letters
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
- Miaomiao Wang
- Zuoguang Liu
- et al.
- 2015
- IRPS 2015
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015