Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology

Paper

01 Nov 2016

Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology

We report record low 8.4 × 10-10Ω-cm2 n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si

Paper

Zuoguang Liu, Dechao Guo, et al.

Applied Physics Letters

Conference paper

Zuoguang Liu, Oleg Gluschenkov, et al.

VLSI Technology 2017

Conference paper

Sadanand V. Deshpande, Ahmet Ozcan, et al.

IWJT 2010

Conference paper

Tenko Yamashita, S. Mehta, et al.

VLSI Technology 2015