Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology

Paper

01 Nov 2016

Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology

We report record low 8.4 × 10-10Ω-cm2 n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si

Conference paper

Jim Adkisson, Marwan H. Khater, et al.

ECS Meeting 2012

Paper

Akira Uedono, Takeshi Nogami, et al.

Journal of Applied Physics

Conference paper

Kangguo Cheng, Chanro Park, et al.

VLSI Technology 2020

Conference paper

Ruilong Xie, Pietro Montanini, et al.

IEDM 2016