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IEEE Electron Device Letters
Paper

Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology

IEEE Electron Device Letters
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Abstract

We report record low 8.4 × 10-10Ω-cm2 n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si:P inside nano-scale contact trenches. Significant reduction of device resistance and resultant great gain of drain current has been demonstrated in scaled n-FinFETs with a contact length of 20 nm.

Date

01 Nov 2016

Publication

IEEE Electron Device Letters

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