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Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodesChanghwan ChoiTakashi Andoet al.2009Microelectronic Engineering
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)Martin M. FrankSangBum Kimet al.2009Microelectronic Engineering
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gateK. HensonH. Buet al.2008IEDM 2008
The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate filmsD.H. HillR.A. Bartynskiet al.2008Journal of Applied Physics
Chemical and structural modifications in a 193-nm photoresist after low-k dry etchE. KestersM. Claeset al.2008Thin Solid Films
Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility studyKingsuk MaitraMartin M. Franket al.2007Journal of Applied Physics
Atomic layer deposition for CMOS scaling: High-k gate dielectrics on Si, Ge, and III-V semiconductorsMartin M. Frank2007ECS Meeting 2007
Post ion-implant photoresist removal via wet chemical cleans combined with physical force pretreatmentsG.G. TotirM.M. Franket al.2007ECS Meeting 2007
Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al2 O3 and Hf O2Martin M. FrankYu Wanget al.2007JES