Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
The net charge state was probed of metal-oxide-semiconductor gate stacks consisting of In0.53Ga0.47As /high-κ dielectric/5 nm TiN, for both Al2O3 and HfO2 dielectrics, via investigation of band bending at the InGaAs/high-κ interface. Using pump-probe photoelectron spectroscopy, changes to band bending were studied for each sequential layer deposited onto the InGaAs substrate and subsequent annealing up to 600 °C. Two behavioral regions were observed in annealing studies: (1) a lower temperature (<350°C) region, attributed to changes at the high-κ/TiN interface, and (2) a higher temperature region (> 350°C), associated with a net positive charge increase within the oxide. These band bending measurements delineate the impact of processing steps inherently inaccessible via capacitance-voltage electrical characterization.
Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
Yanning Sun, Amlan Majumdar, et al.
IEDM 2014
Takashi Ando, Matt Copel, et al.
Applied Physics Letters
Shubham Jain, Hsinyu Tsai, et al.
IEEE Transactions on VLSI Systems