Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
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196 results for Vijay Narayanan
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
Interaction of La2O3 capping layers with HfO 2 gate dielectrics
- M. Copel
- S. Guha
- et al.
- 2009
- Applied Physics Letters
Interfacial layer optimization of high-k/metal gate stacks for low temperature processing
- Barry P. Linder
- Vijay Narayanan
- et al.
- 2009
- Microelectronic Engineering
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study
- Kingsuk Maitra
- Martin M. Frank
- et al.
- 2007
- Journal of Applied Physics
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering
Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
- C. Choi
- E. Cartier
- et al.
- 2007
- Microelectronic Engineering
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering