Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Publications
206 results for Vijay Narayanan
Charge defects, Vt shifts, and the solution to the high-k metal gate n-MOSFET problem
- Supratik Guha
- Vijay Narayanan
- et al.
- 2006
- Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
- Evgeni P. Gusev
- Vijay Narayanan
- et al.
- 2006
- IBM J. Res. Dev
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
Transistor scaling with novel materials
- Meikei Ieong
- Vijay Narayanan
- et al.
- 2006
- Materials Today
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- S. Zafar
- V. Narayanan
- et al.
- 2005
- VLSI Technology 2005
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2
- E. Cartier
- F.R. McFeely
- et al.
- 2005
- VLSI Technology 2005
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
On the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacks
- Kingsuk Maitra
- Barry P. Linder
- et al.
- 2005
- PRiME/ECS Meeting 2005