Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility

Abstract

We demonstrate poly-Si/high-k gate stacks suitable for successful implementation in low power technologies. An optimized gate dielectric process was employed to suppress the large pFET threshold voltage shift commonly found with Hf-based gate dielectrics, reducing it to -0.2 V, while preserving pFET and nFET device performance. © 2005 IEEE.