High performance 0.1μm nMOSFET's with 10 ps/stage delay (85 K) at 1.5 V power supply
- Y. Mii
- S. Rishton
- et al.
- 1993
- VLSI Technology 1993
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21 results for Michael R. Polcari
A high performance low temperature 0.3 μm CMOS on SIMOX
- G. Shahidi
- B. Bucclot
- et al.
- 1992
- VLSI Technology 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
CMOS scaling in the 0.1-μm, 1.X-volt regime for high-performance applications
- G. Shahidi
- J. Warnock
- et al.
- 1995
- IBM J. Res. Dev
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- Siegfried R. Mader
- et al.
- 1991
- IEEE T-ED
The Design and Electrical Characteristics of High-Performance Single-Poly Ion-Implanted Bipolar Transistors
- Denny Duan-Lee Tang
- Tze-Chiang Chen
- et al.
- 1989
- IEEE T-ED
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics