IEDM 1991
Conference paper

A novel high-performance lateral bipolar on SOI

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A novel lateral bipolar structure on SOI (silicon-on-insulator) is described. This device has a thin double-diffused base and a narrow emitter width, determined by the SOI thickness. It has minimal parasitic junction capacitance, as well as minimal emitter and collector resistances. Excellent device characteristics and an fT of about 20 GHz were demonstrated.