Stoichiometric and structural origin of electronic states at the Pd2Si-Si interface
- P.S. Ho
- P.E. Schmid
- et al.
- 1981
- Physical Review Letters
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14 results for H. Föll
Anodic Etching of Defects in P-Type Silicon
- H. Föll
- 2019
- JES
Detection of extended interstitial chains in ion-damaged silicon
- T.Y. Tan
- H. Föll
- et al.
- 2008
- Applied Physics Letters
Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films
- M. Eizenberg
- H. Föll
- et al.
- 2008
- Applied Physics Letters
Anodic etching of p-type silicon as a method for discriminating electrically active and inactive defects
- H. Föll
- 2008
- Applied Physics Letters
On the diamond-cubic to hexagonal phase transformation in silicon
- T.Y. Tan
- H. Föll
- et al.
- 2006
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Transmission electron microscopy of the formation of nickel silicides
- H. Föll
- P.S. Ho
- et al.
- 2006
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system
- K.N. Tu
- G. Ottaviani
- et al.
- 1983
- Journal of Applied Physics
Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces
- P.E. Schmid
- P.S. Ho
- et al.
- 1983
- Physical Review B
Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substrates
- H. Föll
- P.S. Ho
- 1981
- Journal of Applied Physics