Anodic etching of defects in p-type Si can be achieved at small applied voltages with dilute HF as electrolyte. The etching behavior of defects is strongly voltage dependent. At very small voltages only electrically active defects are etched; this is shown by comparison to EBIC. At higher voltages all defects are etched. The method provides a unique tool for investigating geometrical, structural, and electronic properties of defects in a simple way and offers considerable advantages over conventional techniques.