Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
An analysis of electron diffraction data from silicon wafers implanted with 80 keV As+ at high dose rates has shown the presence of a hexagonal phase of Si (a one-element wurtzite structure). The hexagonal silicon consists of small rod-like particles with an orientation relationship to the diamond-cubic (d.c.) silicon lattice given approximately by ⟨0001⟩hex|⟨110⟩d.c. and ⟨0110⟩hex|⟨001⟩d.c.. This hexagonal silicon may also be produced by indenting the wafer surfaces at about 500 to 600°C (Eremenko and Nikitenko 1972) which produces large platelets with {115}d.c. habit planes. A phase transformation scheme is proposed for the silicon dc to hexagonal transformation. It is argued that the transformation may be induced by a uniaxial compressive stress and therefore represents a stress-relief mechanism. A structure model of the dc-hexagonal interface is proposed which consists of five- to seven-membered atomic rings without dangling bonds. © 1981 U.S. Government.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
David B. Mitzi
Journal of Materials Chemistry