W. Krakow, A.A. Levi, et al.
Journal of Materials Research
We have carried out a high-resolution electron microscope lattice imaging study of As+ ion-damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated,〈110〉 chain-type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di-interstitial occupying the 〈100〉 split position is incorporated into every available site along a 〈110〉 chain.
W. Krakow, A.A. Levi, et al.
Journal of Materials Research
F. Legoues, W. Krakow, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
V.M. Castano, E.I. Cooper, et al.
International Conference on Cement Microscopy 1985
T.Y. Tan, C.Y. Kung
Journal of Applied Physics