Detection of extended interstitial chains in ion-damaged silicon

Abstract

We have carried out a high-resolution electron microscope lattice imaging study of As+ ion-damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated,〈110〉 chain-type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di-interstitial occupying the 〈100〉 split position is incorporated into every available site along a 〈110〉 chain.