Intrinsic effective mobility extraction with extremely scaled gate dielectrics

We propose a mobility extraction methodology for metal-oxide-semiconductor field effect transistors with extremely scaled equivalent oxide thickness (EOT) below 1 nm. In conventional split C-V method, extracted mobility shows strong dependence on drain bias. As EOT scales to the requirements of 22 nm node and beyond, the phenomenon becomes more pronounced and causes bigger errors in mobility determination. We studied the physical origin of the extracted mobility dependence on drain bias by technology computer aided design electrostatics modeling and electrical characterization. A methodology is proposed and verified for intrinsic effective mobility determination for devices with EOT down to 0.6 nm. © 2010 American Institute of Physics.