Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
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59 results for Ernest Y. Wu
Comprehensive model for progressive breakdown in nFETs and pFETs
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2016
- IEDM 2016
Multiple breakdown phenomena and modeling for non-uniform dielectric systems
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2014
- IEDM 2014
Reliability challenges for the 10nm node and beyond
- 2014
- IEDM 2014
A time-dependent clustering model for non-uniform dielectric breakdown
- Ernest Y. Wu
- B. Li
- et al.
- 2013
- IEDM 2013
Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IEDM 2012
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Critical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
- L.K. Han
- S.W. Crowder
- et al.
- 1997
- IEDM 1997