M.A. Lutz, R.M. Feenstra, et al.
Surface Science
We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds. © 2005 IEEE.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
K. Rim, J.O. Chu, et al.
VLSI Technology 2002
W. Lu, X.W. Wang, et al.
IEEE Electron Device Letters
L.J. Klein, K.L.M. Lewis, et al.
Journal of Applied Physics