Electron and hole mobility enhancement in strained SOI by wafer bonding

Abstract

N-and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates. Mobility enhancement of 50% for electrons (with 15% Ge) and 15-20% for holes (with 20-25% Ge) has been demonstrated in SSOI MOSFETs. These mobility enhancements are commensurate with those reported for FETs fabricated on strained silicon on bulk SiGe substrates.