Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021