Critical Elements for Next Generation High Performance Computing Nanosheet Technology

Abstract

We evaluate the feasibility of several critical elements for the next generation high performance computing (HPC) Nanosheet (NS) technology. A simple NS pFET SiGe channel provides 40% mobility increase and 10% performance gain over a Si channel, with reduced threshold voltage (Vt) and improved negative bias temperature instability (NBTI). Both volumeless multi-Vt and metal multi-Vt, defined by ultra-thin nFET work function metal (nWFM), enhance the performance due to good Vt uniformity and improved reliability. We also demonstrate that the suspension (Tsus) can be reduced to 9nm for further device performance improvement.