Development of spatial nearest-neighbor analysis and Clustering/Gibbs statistical methodology for filament percolation in dielectric breakdown and forming process in ReRAM devicesErnest Y WuFranco Stellariet al.2021IEDM 2021
Temperature sensitivity of analog in-memory computing using phase-change memoryIrem Boybat-KaraBenedikt Kerstinget al.2021IEDM 2021
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junctionGuohan HuJonathan Sunet al.2021IEDM 2021
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint MemoryHuai-Yu ChengWei-Chih Chienet al.2021IEDM 2021
Critical Elements for Next Generation High Performance Computing Nanosheet TechnologyR. BaoC. Durfeeet al.2021IEDM 2021
Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic TechnologiesM. BhuiyanM. Kimet al.2021IEDM 2021
Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport DevicesH. JagannathanB. Andersonet al.2021IEDM 2021
Electromigration and Line R of Graphene Capped Cu Dual Damascene InterconnectT. NogamiS. Nguyenet al.2021IEDM 2021
First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache ApplicationsH. WuV. Katragaddaet al.2021IEDM 2021