Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL

Abstract

The integration of Cu back End of line (BEOL) with PECVD low K organosilicate glass for 130 nm and 90 nm CMOS technology was discussed. A Cu/SiCOH technology enhanced integration and reliability while preserving the R and C performance level. The chip packaging and other reliability result were presented including BEOL specific tests, environmental and functional stressing of product modules. It was observed that thermal mismatches among the chip , organic package substrates and organic encapsulants generate large tensile stresses on the cooling side of the thermal cycles.