3D copper TSV integration, testing and reliability
- Mukta Farooq
- T. Graves-Abe
- et al.
- 2011
- IEDM 2011
Publications
Date
Featured collections
Popular topics
41 results for F. Chen
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Improved electromigration lifetime for copper interconnects using tantalum implant
- Jeff Gambino
- Timothy D. Sullivan
- et al.
- 2007
- MRS Spring Meeting 2007
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Thermal oxidation of Cu interconnects capped with CoWP
- J.P. Gambino
- S. Smith
- et al.
- 2005
- MRS Spring Meeting 2005
Characterization of selectively deposited cobalt capping layers: Selectivity and electromigration resistance
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- IEEE Electron Device Letters
Enhanced via integration process for copper/ultralow-κ interconnects
- C.-C. Yang
- F. Chen
- et al.
- 2010
- IEEE Electron Device Letters
A method for rapid screening of various low-k TDDB models
- F. Chen
- Carole Graas
- et al.
- 2015
- IRPS 2015
Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability
- Mukta Farooq
- Giuseppe La Rosa
- et al.
- 2015
- IRPS 2015
TDDB at low voltages: An electrochemical perspective
- Ramachandran Muralidhar
- Thomas M. Shaw
- et al.
- 2014
- IRPS 2014