A novel Cycle Alarm Point (CAP) inspection is proposed to monitor PCM cycling degradation. The degradation appears in two stages - (1) right shift of R-I during moderate cycling degradation, and (2) left shift of R-I when cycling damage is severe. We further propose an In-Situ-Self-Anneal (ISSA) procedure, such that once a CAP signal is detected, the annealing procedure is issued to rejuvenate the cells. We demonstrate, for the first time, PCM cycling degradation can be recovered repeatedly. This opens a new window to extend PCM endurance and reliability for storage class memory (SCM) applications.