A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- ISSCC 2016
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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19 results for Jau-Yi Wu
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2017
- IEEE JSSC
A Retention-Aware multilevel cell phase change memory program evaluation metric
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- IEEE Electron Device Letters