IEEE Journal of Solid-State Circuits

A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAM's

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A 7F2 DRAM trench cell and corresponding vertically folded bitline (BL) architecture has been fabricated using a 0.175 p,m technology. This concept features an advanced 30° tilted array device layout and an area penalty-free inter-BL twist. The presented scheme minimizes local well noise by maximizing the number of twisting intervals. A significant improvement of signal margin was measured on a 32-Mbyte test chip. © 2000 IEEE.